Contact effects in polymer transistors

@article{citeulike:1628625, abstract = {Polymer thin film transistors based on the polyfluorene F8T2 exhibit a nonohmic contact resistance, particularly when in the coplanar device geometry. We show how to obtain the current\&\#150;voltage relation for the contact from the transistor output characteristics measured with different channel lengths. The diode-type relation is attributed to the contact injection properties of the metal Schottky barrier. No significant increase in mobility with gate or drain field is observed. \©2002 American Institute of Physics.}, author = {Street, R. A. and Salleo, A. }, citeulike-article-id = {1628625}, doi = {http://dx.doi.org/10.1063/1.1512950}, journal = {Applied Physics Letters}, keywords = {contact, injection, ofet}, number = {15}, pages = {2887--2889}, posted-at = {2007-10-24 14:50:58}, priority = {3}, publisher = {AIP}, title = {Contact effects in polymer transistors}, url = {http://dx.doi.org/10.1063/1.1512950}, volume = {81}, year = {2002} }

TY - JOUR ID - citeulike:1628625 L3 - citeulike-article-id:1628625 N2 - Polymer thin film transistors based on the polyfluorene F8T2 exhibit a nonohmic contact resistance, particularly when in the coplanar device geometry. We show how to obtain the current–voltage relation for the contact from the transistor output characteristics measured with different channel lengths. The diode-type relation is attributed to the contact injection properties of the metal Schottky barrier. No significant increase in mobility with gate or drain field is observed. ©2002 American Institute of Physics. IS - 15 JF - Applied Physics Letters EP - 2889 TI - Contact effects in polymer transistors PB - AIP VL - 81 SP - 2887 KW - contact KW - injection KW - ofet AU - Street, RA AU - Salleo, A PY - 2002/// UR - http://dx.doi.org/10.1063/1.1512950 ER -