Fabrication and structural analysis of Al, Ga, and In nanocluster crystals

by: Jin-Feng Jia, Xi Liu, Jun-Zhong Wang, Jian-Long Li, XS Wang, Qi-Kun Xue, Zhi-Qiang Li, Zhenyu Zhang, SB Zhang

Physical Review B, Vol. 66, No. 16. (23 October 2002), 165412.

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Abstract

Artificial nanocluster crystals of In; Ga; and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7Ã7 surface is used as a template for ordering the clusters. The atomic structures; formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication; and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.

@article{citeulike:772008, abstract = {Artificial nanocluster crystals of In; Ga; and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7\~{A}7 surface is used as a template for ordering the clusters. The atomic structures; formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication; and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.}, author = {Jia, Jin-Feng and Liu, Xi and Wang, Jun-Zhong and Li, Jian-Long and Wang, X. S. and Xue, Qi-Kun and Li, Zhi-Qiang and Zhang, Zhenyu and Zhang, S. B. }, citeulike-article-id = {772008}, doi = {http://dx.doi.org/10.1103/PhysRevB.66.165412}, journal = {Physical Review B}, keywords = {clusters, si-7x7}, month = {October}, number = {16}, pages = {165412+}, posted-at = {2006-07-25 10:06:27}, priority = {2}, publisher = {American Physical Society}, title = {Fabrication and structural analysis of Al, Ga, and In nanocluster crystals}, url = {http://dx.doi.org/10.1103/PhysRevB.66.165412}, volume = {66}, year = {2002} }

RIS record

TY - JOUR ID - citeulike:772008 L3 - citeulike-article-id:772008 N2 - Artificial nanocluster crystals of In; Ga; and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7Ã7 surface is used as a template for ordering the clusters. The atomic structures; formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication; and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications. IS - 16 JF - Physical Review B TI - Fabrication and structural analysis of Al, Ga, and In nanocluster crystals PB - American Physical Society VL - 66 SP - 165412 KW - clusters KW - si-7x7 AU - Jia, Jin-Feng AU - Liu, Xi AU - Wang, Jun-Zhong AU - Li, Jian-Long AU - Wang, XS AU - Xue, Qi-Kun AU - Li, Zhi-Qiang AU - Zhang, Zhenyu AU - Zhang, SB PY - 2002/10/23/ UR - http://dx.doi.org/10.1103/PhysRevB.66.165412 ER -

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