Initial adsorption of Ge on Si(1 1 1)-(7 x 7) surface at room temperature

by: Long Yan, Haiqiang Yang, Hongjun Gao, Sishen Xie, Shijin Pang

Surface Science, Vol. 498, No. 1-2. (1 February 2002), pp. 83-88.

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Abstract

The initial stage of Ge adsorption on Si(1 1 1)-(7×7) surface has been investigated by ultrahigh-vacuum scanning tunneling microscopy at room temperature. We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(1 1 1)-(7×7) surface. Such clusters can behave like quantum dots, which display two states at +1.5 and −1.5 eV with respect to the Fermi level. The formation mechanism of the clusters is discussed.

@article{citeulike:771147, abstract = {The initial stage of Ge adsorption on Si(1 1 1)-(7×7) surface has been investigated by ultrahigh-vacuum scanning tunneling microscopy at room temperature. We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(1 1 1)-(7×7) surface. Such clusters can behave like quantum dots, which display two states at +1.5 and −1.5 eV with respect to the Fermi level. The formation mechanism of the clusters is discussed.}, author = {Yan, Long and Yang, Haiqiang and Gao, Hongjun and Xie, Sishen and Pang, Shijin }, citeulike-article-id = {771147}, doi = {http://dx.doi.org/10.1016/S0039-6028(01)01445-5}, journal = {Surface Science}, keywords = {clusters, si-7x7}, month = {February}, number = {1-2}, pages = {83--88}, posted-at = {2006-07-24 14:30:04}, priority = {2}, title = {Initial adsorption of Ge on Si(1 1 1)-(7 x 7) surface at room temperature}, url = {http://dx.doi.org/10.1016/S0039-6028(01)01445-5}, volume = {498}, year = {2002} }

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TY - JOUR ID - citeulike:771147 L3 - citeulike-article-id:771147 N2 - The initial stage of Ge adsorption on Si(1 1 1)-(7×7) surface has been investigated by ultrahigh-vacuum scanning tunneling microscopy at room temperature. We demonstrate that there is a critical nucleus for the adsorbed Ge clusters on Si(1 1 1)-(7×7) surface. Such clusters can behave like quantum dots, which display two states at +1.5 and −1.5 eV with respect to the Fermi level. The formation mechanism of the clusters is discussed. IS - 1-2 JF - Surface Science EP - 88 TI - Initial adsorption of Ge on Si(1 1 1)-(7 x 7) surface at room temperature VL - 498 SP - 83 KW - clusters KW - si-7x7 AU - Yan, Long AU - Yang, Haiqiang AU - Gao, Hongjun AU - Xie, Sishen AU - Pang, Shijin PY - 2002/02/01/ UR - http://dx.doi.org/10.1016/S0039-6028(01)01445-5 ER -

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