Formation of ordered Ge quantum dots on the Si(111)--(7 x 7) surface

by: YP Zhang, L Yan, SS Xie, SJ Pang, HJ Gao

Applied Physics Letters, Vol. 79, No. 20. (2001), pp. 3317-3319.

View FullText article

Scitation (AIP), Scitation (AIP) (Permanent Link), DOI

Reviews [Write a review of this article]

There are no reviews of this article

Find related articles from these CiteULike users

zeta101

Find related articles with these CiteULike tags

clusters, si-7x7

Abstract

We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices. ©2001 American Institute of Physics.

@article{citeulike:764946, abstract = {We present a pathway for the formation of ordered Ge quantum dots on Si(111)\&\#150;(7\×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)\&\#150;(7\×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)\&\#150;(7\×7). The formed Ge quantum dots may have a great potential in the application of nanodevices. \©2001 American Institute of Physics.}, author = {Zhang, Y. P. and Yan, L. and Xie, S. S. and Pang, S. J. and Gao, H. J. }, citeulike-article-id = {764946}, doi = {http://dx.doi.org/10.1063/1.1419052}, journal = {Applied Physics Letters}, keywords = {clusters, si-7x7}, number = {20}, pages = {3317--3319}, posted-at = {2006-07-19 18:09:20}, priority = {2}, publisher = {AIP}, title = {Formation of ordered Ge quantum dots on the Si(111)--(7 x 7) surface}, url = {http://dx.doi.org/10.1063/1.1419052}, volume = {79}, year = {2001} }

RIS record

TY - JOUR ID - citeulike:764946 L3 - citeulike-article-id:764946 N2 - We present a pathway for the formation of ordered Ge quantum dots on Si(111)(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices. ©2001 American Institute of Physics. IS - 20 JF - Applied Physics Letters EP - 3319 TI - Formation of ordered Ge quantum dots on the Si(111)--(7 x 7) surface PB - AIP VL - 79 SP - 3317 KW - clusters KW - si-7x7 AU - Zhang, YP AU - Yan, L AU - Xie, SS AU - Pang, SJ AU - Gao, HJ PY - 2001/// UR - http://dx.doi.org/10.1063/1.1419052 ER -

RIS BibTeX