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these_morels plasma [49 articles]

Neue Publikationen in these_morels Bibliothek eingetragen unter dem Bezeichner: plasma. You can also see everyone's plasma.
  • Silicon doping effects in reactive plasma etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475.
    by Young H Lee, Mao M Chen
    posted to silicon plasma etching doping by these_morel on 2008-09-16 15:30:03 as **
  • A simple analysis of an inductive RF discharge
    Plasma Sources Science and Technology, Vol. 1, No. 3. (1992), pp. 179-186.
    by RB Piejak, VA Godyak, BM Alexandrovich
    posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:31:10 as **
  • Application of a low-pressure radio frequency discharge source to polysilicon gate etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 1. (1990), pp. 1-4.
    by JM Cook, DE Ibbotson, DL Flamm
    posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:30:18 as **
  • Review of inductively coupled plasmas for plasma processing
    Plasma Sources Science and Technology, Vol. 1, No. 2. (1992), pp. 109-116.
    by J Hopwood
    posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:29:26 as **
  • Determination of electromagnetic properties of low-pressure electrodeless inductive discharges
    Journal of Physics D: Applied Physics, Vol. 23, No. 3. (1990), pp. 293-298.
    by JW Denneman
    posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:28:16 as **
  • Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2
    (2004)
    by Martin Kogelschatz
    posted to dispositifs-experimentaux introduction plasma by these_morel on 2008-08-11 10:27:20 as **
  • Microprofile simulations for plasma etching with surface passivation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753.
    by S Hamaguchi, M Dalvie
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:36:20 as **
  • Simulation of surface topography evolution during plasma etching by the method of characteristics
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635.
    by John C Arnold, Herbert H Sawin, Manoj Dalvie, Satoshi Hamaguchi
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:35:13 as **
  • Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211.
    by GS Oehrlein, JF Rembetski, EH Payne
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:33:25 as **
  • X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426.
    by L Desvoivres, L Vallier, O Joubert
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:32:30 as **
  • Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97.
    by FH Bell, O Joubert
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:31:39 as **
  • Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226.
    by KV Guinn, CC Cheng, VM Donnelly
    posted to introduction passivation plasma by these_morel on 2008-07-10 15:30:50 as **
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as **
  • Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60.
    by TEFM Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:56:38 as **
  • Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129.
    by MJ Sowa, ME Littau, V Pohray, JL Cecchi
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:55:38 as **
  • The role of polymer deposited in differential dielectric etch
    The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095.
    by S Fang, C Chiang, D Fraser, B Lee, P Keswick, M Chang, K Fung
    posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:54:36 as **
  • Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor
    Physical Review, Vol. 122, No. 1. (1 April 1961), 83.
    by Homer D Hagstrum
    posted to introduction plasma by these_morel on 2008-07-08 06:51:12 as **
  • Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
    Physical Review, Vol. 184, No. 2. (1969), 383.
    by Peter Sigmund
    posted to introduction plasma by these_morel on 2008-07-08 06:47:24 as **
  • Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy
    Applied Physics Letters, Vol. 55 (1989), 1960.
    by Christoph Steinbrüchel
    posted to introduction plasma by these_morel on 2008-07-04 13:43:49 as **
  • Energy dependence of the ion-induced sputtering yields of monatomic solids
    Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80.
    by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara
    posted to introduction plasma by these_morel on 2008-07-04 13:35:27 as **
  • Control of relative etch rates of SiO2 and Si in plasma etching
    Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147.
    by Rudolf A Heinecke
    posted to introduction plasma by these_morel on 2008-07-04 09:35:31 as **
  • Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
    Pure and Applied Chemistry, Vol. 62, No. 9. (1990), pp. 1709-1720.
    by Daniel L Flamm
    posted to introduction plasma by these_morel on 2008-07-04 09:13:26 as **
  • The reaction of fluorine atoms with silicon
    Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639.
    by Daniel L Flamm, Vincent M Donnelly, John A Mucha
    posted to introduction plasma by these_morel on 2008-07-04 09:08:59 as **
  • Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching
    Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196.
    by JW Coburn, Harold F Winters
    posted to introduction plasma by these_morel on 2008-07-03 15:57:45 as **
  • Plasma etching---A discussion of mechanisms
    Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403.
    by JW Coburn, Harold F Winters
    posted to introduction plasma by these_morel on 2008-07-03 15:55:00 as **
  • A General Theory of the Plasma of an Arc
    Physical Review, Vol. 34, No. 6. (1929), 876.
    by Lewi Tonks, Irving Langmuir
    posted to introduction plasma by these_morel on 2008-07-03 15:06:45 as *
  • Plasma Etching of Refractory Gates for VLSI Applications
    Journal of the Electrochemical Society, Vol. 131, No. 10. (1984), 2325.
    by TP Chow, AJ Steckl
    posted to etching plasma tungsten by these_morel on 2008-04-23 09:10:58 as read
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as read
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: I. Without silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 icp plasma xps by these_morel on 2008-03-05 09:16:38 as read
  • Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas
    Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530.
    by G Cunge, M Kogelschatz, N Sadeghi
    posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as read
  • Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas
    Plasma Sources Science and Technology, Vol. 14, No. 2. (2005), pp. S42-S52.
    by G Cunge, M Kogelschatz, O Joubert, N Sadeghi
    posted to absorption cl2-o2 parois plasma by these_morel on 2008-03-05 09:11:32 as read
  • The Kinetics of Tungsten Etching by Atomic and Molecular Chlorine
    Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2090-2095.
    by M Balooch, DS Fischl, DR Olander
    posted to cl2 etching plasma tungsten by these_morel on 2008-03-05 08:44:22 as read
  • Etching of Tungsten and Tungsten Silicide Films by Chlorine Atoms
    Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2016-2019.
    by DA Fischl, GW Rodrigues, DW Hess
    posted to cl2 plasma tungsten wsi by these_morel on 2008-03-05 08:39:23 as read
  • Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 3. (2004), pp. 553-563.
    by O Joubert, G Cunge, B Pelissier, L Vallier, M Kogelschatz, E Pargon
    posted to floating_sample plasma xps by these_morel on 2007-10-08 14:47:12 as ****
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as read along with 1 group LTM_LETI_etching
  • Development of Damage Free HfAlO Removal Process Using Plasma Treatment.
    (2004)
    by JW Sun, CH Shin, GJ Min, CJ Kang, HK Cho, JT Moon
    posted to ar cf4 hfalo high-k plasma rie by these_morel on 2006-03-21 07:40:08 as read along with 1 group LTM_LETI_etching
  • Plasma induced 193-nm Resist Deformation: Problems and a Possible Solution.
    (2004)
    by H Stryuf, QT Le, T Dupont, W Boullart, S Vanhaelemeersch
    posted to deformation-resist hbr icp plasma by these_morel on 2006-03-21 07:38:15 as read along with 1 group LTM_LETI_etching
  • Analyse des mécanismes mis en jeu lors de l’élaboration par gravure plasma de structures de dimension nanométrique : Application au transistor CMOS ultime.
    (3 December 2004)
    by Erwin Pargon
    posted to etching plasma by these_morel on 2006-03-21 07:17:37 as read along with 1 group LTM_LETI_etching
  • notes Etching of ruthenium coatings in O[sub 2]- and Cl[sub 2]-containing plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 1-8.
    by CC Hsu, JW Coburn, DB Graves
    posted to cl2-o2 plasma ruthenium by these_morel on 2006-02-28 15:18:11 as ** along with 1 group LTM_LETI_etching
  • notes Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042.
    by Masaaki Sato, Yoshinobu Arita
    posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as read along with 1 group LTM_LETI_etching
  • notes Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 5. (1991), pp. 2530-2535.
    by N Selamoglu, CN Bredbenner, TA Giniecki, HJ Stocker
    posted to aluminium angle chf3-cl2-bcl3 plasma rie taper by these_morel on 2006-02-28 15:00:10 as read along with 1 group LTM_LETI_etching
  • notes Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191.
    by SC Mcnevin
    posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as read along with 1 group LTM_LETI_etching
  • notes The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, No. 2. (1989), pp. 167-174.
    by TH Daubenspeck, EJ White, PC Sukanek
    posted to cf3-cl cf4-o2 plasma rie tungsten by these_morel on 2006-02-28 14:52:40 as read along with 1 group LTM_LETI_etching
  • notes Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2]
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041.
    by Gottlieb S Oehrlein, Lennart J Lindstom
    posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as read along with 1 group LTM_LETI_etching
  • notes Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2]
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572.
    by WM Greene, DW Hess, WG Oldham
    posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as read along with 1 group LTM_LETI_etching
  • notes Selective reactive ion etching of tungsten films in CHF[sub 3] and other fluorinated gases
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 4. (1988), pp. 1073-1080.
    by WS Pan, AJ Steckl
    posted to cbrf3 cf4 chf3 plasma rie sf6 tungsten by these_morel on 2006-02-28 14:43:21 as read along with 1 group LTM_LETI_etching
  • notes Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553.
    by C Wang, VM Donnelly
    posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as read along with 1 group LTM_LETI_etching
  • notes Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric
    Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20.
    by Jinghao Chen, Won J Yoo, Daniel SH Chan, Dim L Kwong
    posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel on 2006-02-17 15:00:46 as read along with 1 group LTM_LETI_etching
  • Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
    Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79.
    by Mutumi Tuda, Kenji Shintani, Junji Tanimura
    posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as read along with 1 group LTM_LETI_etching
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