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rices Mandelis [62 articles]

Recent papers posted to rices library by the author Mandelis. You can also see everyones Mandelis.
  • Structure and the Reflectionless/Refractionless Nature of Parabolic Diffusion-Wave Fields
    Physical Review Letters, Vol. 87, No. 2. (20 June 2001), 020801.
    by Andreas Mandelis, Lena Nicolaides, Yan Chen
    posted to physrev by rice on 2008-06-21 05:36:56 as **
  • Intensity dependence of the photoreflectance amplitude in semiconductors
    Physical Review B, Vol. 50, No. 19. (15 November 1994), 14228.
    by Robert E Wagner, Andreas Mandelis
    posted to physrev by rice on 2008-06-19 15:50:23 as **
  • Absolute nonradiative energy-conversion-efficiency spectra in Ti3+:Al2O3 crystals measured by noncontact quadrature photopyroelectric spectroscopy
    Physical Review B, Vol. 48, No. 10. (1993), 6808.
    by A Mandelis, J Vanniasinkam, S Budhudu, A Othonos, M Kokta
    posted to physrev by rice on 2008-06-19 15:45:09 as **
  • Thermal-diffusivity measurements of ultrahigh thermal conductors with use of scanning photothermal rate-window spectrometry: Chemical-vapor-deposition diamonds
    Physical Review B, Vol. 46, No. 20. (15 November 1992), 13526.
    by Zhuohui Chen, Andreas Mandelis
    posted to physrev by rice on 2008-06-19 15:44:52 as **
  • Photothermal deflection method for monitoring photoelectronic and nonradiative energy conversion in semiconductor photoelectrochemical cells
    Physical Review B, Vol. 38, No. 14. (15 November 1988), 9920.
    by Robert E Wagner, Andreas Mandelis
    posted to physrev by rice on 2008-06-19 15:29:51 as **
  • Kinetics of surface-state laser annealing in Si by frequency-swept infrared photothermal radiometry
    Applied Physics Letters, Vol. 74, No. 17. (1999), pp. 2429-2431.
    by Mario E Rodriguez, JA Garcia, A Mandelis, C Jean, Y Riopel
    posted to apl by rice on 2008-05-07 07:07:07 as **
  • Infrared photothermal radiometric deep-level transient spectroscopy of shallow B[sup + ] dopant states in [bold p]-Si
    Applied Physics Letters, Vol. 71, No. 18. (1997), pp. 2671-2673.
    by A Salnick, A Mandelis, C Jean
    posted to apl by rice on 2008-05-07 07:00:06 as **
  • Monitoring of ion implantation in Si with carrier plasma waves using infrared photothermal radiometry
    Applied Physics Letters, Vol. 71, No. 11. (1997), pp. 1531-1533.
    by A Salnick, A Mandelis, F Funak, C Jean
    posted to apl by rice on 2008-05-07 06:59:47 as **
  • Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing
    Applied Physics Letters, Vol. 69, No. 6. (1996), pp. 821-823.
    by Andreas Othonos, Constantinos Christofides, Andreas Mandelis
    posted to apl by rice on 2008-05-07 06:53:43 as **
  • Noncontact measurement of transport properties of long-bulk-carrier-lifetime Si wafers using photothermal radiometry
    Applied Physics Letters, Vol. 69, No. 17. (1996), pp. 2522-2524.
    by Alex Salnick, Andreas Mandelis, Claude Jean
    posted to apl by rice on 2008-05-07 06:51:07 as **
  • Noncontact photothermal infrared radiometric deep-level transient spectroscopy of GaAs wafers
    Applied Physics Letters, Vol. 67, No. 11. (1995), pp. 1582-1584.
    by A Mandelis, RA Budiman, M Vargas, D Wolff
    posted to apl by rice on 2008-05-07 06:48:12 as **
  • Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: A temperature study
    Applied Physics Letters, Vol. 54, No. 24. (1989), pp. 2392-2394.
    by Alex I Vitkin, Constantinos Christofides, Andreas Mandelis
    posted to apl by rice on 2008-05-07 06:31:40 as **
  • Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors
    Journal of Applied Physics, Vol. 85, No. 10. (1999), pp. 7392-7397.
    by Tetsuo Ikari, Alex Salnick, Andreas Mandelis
    posted to jap by rice on 2008-04-24 10:10:15 as **
  • Nonlinear fundamental photothermal response in three-dimensional geometry: Theoretical model
    Journal of Applied Physics, Vol. 85, No. 3. (1999), pp. 1811-1821.
    by Andreas Mandelis, Alex Salnick, Jon Opsal, Allan Rosencwaig
    posted to jap by rice on 2008-04-24 10:10:11 as **
  • Application of a generalized methodology for quantitative thermal diffusivity depth profile reconstruction in manufactured inhomogeneous steel-based materials
    Journal of Applied Physics, Vol. 83, No. 7. (1998), pp. 3495-3498.
    by Mahendra Munidasa, Frank Funak, Andreas Mandelis
    posted to jap by rice on 2008-04-24 10:04:37 as **
  • Relative sensitivity of photomodulated reflectance and photothermal infrared radiometry to thermal and carrier plasma waves in semiconductors
    Journal of Applied Physics, Vol. 82, No. 4. (1997), pp. 1853-1859.
    by A Salnick, A Mandelis, H Ruda, C Jean
    posted to jap by rice on 2008-04-24 10:01:41 as **
  • Generalized methodology for thermal diffusivity depth profile reconstruction in semi-infinite and finitely thick inhomogeneous solids
    Journal of Applied Physics, Vol. 80, No. 10. (1996), pp. 5570-5578.
    by Andreas Mandelis, Frank Funak, Mahendra Munidasa
    posted to jap by rice on 2008-04-24 09:56:16 as **
  • Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometry
    Journal of Applied Physics, Vol. 80, No. 9. (1996), pp. 5332-5341.
    by A Mandelis, A Othonos, C Christofides, Boussey J Said
    posted to jap by rice on 2008-04-24 09:53:49 as **
  • Hamiltonian plasma-harmonic oscillator theory: Generalized depth profilometry of electronically continuously inhomogeneous semiconductors and the inverse problem
    Journal of Applied Physics, Vol. 80, No. 9. (1996), pp. 5278-5288.
    by Alex Salnick, Andreas Mandelis
    posted to jap by rice on 2008-04-24 09:53:47 as **
  • Two-layer model for photomodulated thermoreflectance of semiconductor wafers
    Journal of Applied Physics, Vol. 80, No. 3. (1996), pp. 1713-1725.
    by C Christofides, F Diakonos, A Seas, C Christou, M Nestoros, A Mandelis
    posted to jap by rice on 2008-04-24 09:53:41 as **
  • Highly resolved separation of carrier- and thermal-wave contributions to photothermal signals from Cr-doped silicon using rate-window infrared radiometry
    Journal of Applied Physics, Vol. 74, No. 5. (1993), pp. 3431-3434.
    by A Mandelis, R Bleiss, F Shimura
    posted to jap by rice on 2008-04-24 09:32:14 as **
  • Photothermal rate-window spectrometry for noncontact bulk lifetime measurements in semiconductors
    Journal of Applied Physics, Vol. 73, No. 10. (1993), pp. 5043-5048.
    by ZH Chen, R Bleiss, A Mandelis, A Buczkowski, F Shimura
    posted to jap by rice on 2008-04-24 09:28:32 as **
  • Photoacoustic frequency-domain depth profiling of continuously inhomogeneous condensed phases: Theory and simulations for the inverse problem
    Journal of Applied Physics, Vol. 70, No. 3. (1991), pp. 1761-1770.
    by Andreas Mandelis, Samuel B Peralta, Jan Thoen
    posted to jap by rice on 2008-04-24 09:05:45 as **
  • Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion-implanted and amorphous thin layers
    Journal of Applied Physics, Vol. 67, No. 6. (1990), pp. 2822-2830.
    by Alex I Vitkin, Constantinos Christofides, Andreas Mandelis
    posted to jap by rice on 2008-04-24 08:57:53 as **
  • Photothermal reflectance investigation of processed silicon. I. Room-temperature study of the induced damage and of the annealing kinetics of defects in ion-implanted wafers
    Journal of Applied Physics, Vol. 67, No. 6. (1990), pp. 2815-2821.
    by Constantinos Christofides, Alex I Vitkin, Andreas Mandelis
    posted to jap by rice on 2008-04-24 08:57:51 as **
  • Spectroscopic photothermal radiometry as a deep subsurface depth profilometric technique in semiconductors
    Papers from the 12th International Conference on Photoacoustic and Photothermal Phenomena, Vol. 74, No. 1. (2003), pp. 529-532.
    by D Shaughnessy, A Mandelis
    posted to mandelis by rice on 2008-04-24 07:22:56 as **
  • Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects
    Journal of Applied Physics, Vol. 93, No. 9. (2003), pp. 5236-5243.
    by Derrick Shaughnessy, Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:20:32 as **
  • Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects
    Journal of Applied Physics, Vol. 93, No. 9. (2003), pp. 5244-5250.
    by Derrick Shaughnessy, Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:20:29 as **
  • Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
    Physical Review B (Condensed Matter and Materials Physics), Vol. 67, No. 20. (2003)
    by Andreas Mandelis, Jerias Batista, Derrick Shaughnessy
    posted to mandelis by rice on 2008-04-24 07:20:26 as **
  • Photothermal investigation of the thermal shock behavior of alumina ceramics for engine components
    Journal of Applied Physics, Vol. 95, No. 3. (2004), pp. 1042-1049.
    by Bincheng Li, Andreas Mandelis, Zoltan Z Kish
    posted to mandelis by rice on 2008-04-24 07:20:23 as **
  • Thermal-wave nondestructive evaluation of cylindrical composite structures using frequency-domain photothermal radiometry
    Journal of Applied Physics, Vol. 97, No. 1. (2005)
    by Chinhua Wang, Andreas Mandelis, Yue Liu
    posted to mandelis by rice on 2008-04-24 07:20:21 as **
  • Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
    Applied Physics Letters, Vol. 82, No. 23. (2003), pp. 4077-4079.
    by Jerias Batista, Andreas Mandelis, Derrick Shaughnessy
    posted to mandelis by rice on 2008-04-24 07:19:44 as **
  • Characterization of Ion-implantation in Silicon by using Laser Infrared Photo-Thermal Radiometry (PTR)
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology, Vol. 683, No. 1. (2003), pp. 744-747.
    by JA Garcia, X Guo, A Mandelis, A Simmons, B Li
    edited by David G Seiler, Alain C Diebold, Thomas J Shaffner, Robert Mcdonald, Stefan Zollner, Rajinder P Khosla, Erik M Secula
    posted to mandelis by rice on 2008-04-24 07:19:40 as **
  • Three-layer photocarrier radiometry model of ion-implanted silicon wafers
    Journal of Applied Physics, Vol. 95, No. 12. (2004), pp. 7832-7840.
    by Bincheng Li, Derrick Shaughnessy, Andreas Mandelis, Jerias Batista, Jose Garcia
    posted to mandelis by rice on 2008-04-24 07:19:31 as **
  • Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
    Applied Physics Letters, Vol. 84, No. 25. (2004), pp. 5219-5221.
    by Derrick Shaughnessy, Bincheng Li, Andreas Mandelis, Jerias Batista
    posted to mandelis by rice on 2008-04-24 07:19:29 as **
  • Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers
    Journal of Applied Physics, Vol. 96, No. 1. (2004), pp. 186-196.
    by Bincheng Li, Derrick Shaughnessy, Andreas Mandelis, Jerias Batista, Jose Garcia
    posted to mandelis by rice on 2008-04-24 07:19:27 as **
  • Dental depth profilometric diagnosis of pit and fissure caries using frequency-domain infrared photothermal radiometry and modulated laser luminescence
    Photons Plus Ultrasound: Imaging and Sensing, Vol. 5320, No. 1. (2004), pp. 29-39.
    by Raymond J Jeon, Andreas Mandelis, Victor Sanchez, Stephen H Abrams
    edited by Alexander A Oraevsky, Lihong V Wang
    posted to mandelis by rice on 2008-04-24 07:19:24 as **
  • Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry
    Applied Physics Letters, Vol. 85, No. 10. (2004), pp. 1713-1715.
    by Jerias Batista, Andreas Mandelis, Derrick Shaughnessy, Bincheng Li
    posted to mandelis by rice on 2008-04-24 07:19:22 as **
  • Photothermal Radiometry with Solid Cylindrical Samples
    Journal of Applied Physics, Vol. 96, No. 7. (2004), pp. 3756-3762.
    by Chinhua Wang, Andreas Mandelis, Yue Liu
    posted to mandelis by rice on 2008-04-24 07:19:19 as **
  • Development of a laser photothermoacoustic frequency-swept system for subsurface imaging: Theory and experiment
    The Journal of the Acoustical Society of America, Vol. 116, No. 6. (2004), pp. 3523-3533.
    by Ying Fan, Andreas Mandelis, Gloria Spirou, Alex I Vitkin
    posted to mandelis by rice on 2008-04-24 07:19:18 as **
  • Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
    Journal of Applied Physics, Vol. 97, No. 2. (2005)
    by Bincheng Li, Derrick Shaughnessy, Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:19:11 as **
  • H[sup +] ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
    Journal of Applied Physics, Vol. 101, No. 12. (2007)
    by Chinhua Wang, Andreas Mandelis, Jordan Tolev, Bernd Burchard, Jan Meijer
    posted to mandelis by rice on 2008-04-24 07:15:27 as **
  • Deep level photothermal spectroscopy: Physical principles and applications to semi-insulating GaAs band-gap multiple trap states
    Journal of Applied Physics, Vol. 103, No. 4. (2008)
    by Andreas Mandelis, Jun Xia
    posted to mandelis by rice on 2008-04-24 07:14:55 as **
  • Theory of space-charge layer dynamics at oxide-semiconductor interfaces under optical modulation and detection by laser photocarrier radiometry
    Journal of Applied Physics, Vol. 97, No. 8. (2005)
    by Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:14:46 as **
  • Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO[sub 2]-Si interfaces
    Journal of Applied Physics, Vol. 97, No. 8. (2005)
    by Andreas Mandelis, Jerias Batista, Jürgen Gibkes, Michael Pawlak, Josef Pelzl
    posted to mandelis by rice on 2008-04-24 07:14:44 as **
  • Influence of vignetting on signal analysis of photocarrier radiometry of semiconductor wafers
    Review of Scientific Instruments, Vol. 76, No. 6. (2005)
    by Bincheng Li, Derrick Shaughnessy, Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:14:42 as **
  • Photo-Carrier-Radiometry (PCR) Metrology for Semiconductor Manufacturing Inspection
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005, Vol. 788, No. 1. (2005), pp. 625-627.
    by JA Garcia, X Guo, A Mandelis, A Simmons
    edited by David G Seiler, Alain C Diebold, Robert Mcdonald, Caroline R Ayre, Rajinder P Khosla, Stefan Zollner, Erik M Secula
    posted to mandelis by rice on 2008-04-24 07:14:40 as **
  • Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon
    Journal of Applied Physics, Vol. 98, No. 12. (2005)
    by Andreas Mandelis, Micha Pawlak, Chinhua Wang, Isabel D Holtfort, Josef Pelzl
    posted to mandelis by rice on 2008-04-24 07:14:37 as **
  • Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Photocarrier Radiometry
    Journal of The Electrochemical Society, Vol. 153, No. 4. (2006), pp. G283-G290.
    by Derrick Shaughnessy, Andreas Mandelis
    posted to mandelis by rice on 2008-04-24 07:14:35 as **
  • Frequency domain photothermal radiometry with spherical solids
    Journal of Applied Physics, Vol. 101, No. 8. (2007)
    by Chinhua Wang, Yue Liu, Andreas Mandelis, Jun Shen
    posted to mandelis by rice on 2008-04-24 07:14:33 as **
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