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Tag poly-si [10 articles]

Recent papers classified by the tag poly-si.
  • Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
    Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79.
    by Mutumi Tuda, Kenji Shintani, Junji Tanimura
    posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as read
  • notes WSix/WN/polysilicon DRAM gate stack with a 50 A WN layer as a diffusion barrier and an etch stop
    Materials Science in Semiconductor Processing, Vol. 8, No. 5. (October 2005), pp. 602-607.
    by Heon Lee, Dong-Hwan Kim, Joo-Youl Huh, Deok-Kee Kim
    posted to cl2-nf3-o2 gate metal poly-si tcp tungsten-nitride wsi by these_morel on 2006-02-17 15:45:45 as read
  • Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778.
    by A Le Gouil, O Joubert, G Cunge, T Chevolleau, L Vallier, B Chenevier, I Matko
    posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as read
  • Influence of the polysilicon doping on the electrical quality of thin oxides: a confrontation between vertical and horizontal furnaces
    Materials Science in Semiconductor Processing, Vol. 4, No. 1-3. (6 February 2001), pp. 153-157.
    by G Franco, M Priulla, G Renna, G Scerra
    posted to resistivity poly-si doping by these_morel on 2008-09-17 13:17:39 as **
  • notes Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042.
    by Masaaki Sato, Yoshinobu Arita
    posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as read
  • notes Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221.
    by Gowri P Kota, JW Coburn, David B Graves
    posted to cl2 etching molecular-beam-system poly-si wsi by these_morel on 2006-02-28 15:06:32 as read
  • On the origin of the notching effect during etching in uniform high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 70-87.
    by Gyeong S Hwang, Konstantinos P Giapis
    posted to poly-si notching by these_morel on 2008-09-18 13:29:55 as **
  • Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2174-2183.
    by X Detter, R Palla, Thomas I Boutherin, E Pargon, G Cunge, O Joubert, L Vallier
    posted to poly-si overetch hbr etching by these_morel on 2008-11-05 09:48:40 as **
  • notes Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191.
    by SC Mcnevin
    posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as read
  • notes Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching
    The 46th international symposium of the american vacuum society, Vol. 18, No. 4. (2000), pp. 1173-1175.
    by Shih P Lin, Chen H Ou, Szetsen Lee, Yu C Tien, Chin F Hsu
    posted to hbr-cl2-o2 poly-si rie time-delay-effect wsix by these_morel on 2006-02-28 15:09:27 as read
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